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BCR3AS-12 features ? i t(rms) : 3 a ? v drm : 600 v ? i fgt i , i rgt i , i rgt iii : 15 ma ? non-insulated type ? planar passivation type outline 2, 4 1 3 1. t 1 terminal 2. t 2 terminal 3. gate terminal 4. t 2 terminal mp-3a 1 3 2 4 applications hybrid ic, solid state relay, switching mode power supply, light dimmer, electric fan, electric blanket, control of household equipment such as washing machine, and other general purpose control applications maximum ratings voltage class parameter symbol 12 unit repetitive peak off-state voltage note1 v drm 600 v non-repetitive peak off-state voltage note1 v dsm 720 v www.kersemi.com
BCR3AS-12 parameter symbol ratings unit conditions rms on-state current i t(rms) 3 a commercial frequency, sine full wave 360 conduction, tc = 108c note3 surge on-state current i tsm 30 a 60hz sinewave 1 full cycle, peak value, non-repetitive i 2 t for fusing i 2 t3.7a 2 s value corresponding to 1 cycle of half wave 60hz, surge on-state current peak gate power dissipation p gm 3w average gate power dissipation p g(av) 0.3 w peak gate voltage v gm 6v peak gate current i gm 0.3 a junction temperature tj ? 40 to +125 c storage temperature tstg ? 40 to +125 c mass ? 0.26 g typical value notes: 1. gate open. electrical characteristics parameter symbol min. typ. max. unit test conditions repetitive peak off-state current i drm ? ? 2.0 ma tj = 125c, v drm applied on-state voltage v tm ? ? 1.7 v tc = 25c, i tm = 4.5 a, instantaneous measurement i v fgt i ??1.5v ii v rgt i ??1.5v gate trigger voltage note2 iii v rgt iii ??1.5v tj = 25c, v d = 6 v, r l = 6 ? , r g = 330 ? i i fgt i ??15ma ii i rgt i ??15ma gate trigger current note2 iii i rgt iii ??15ma tj = 25c, v d = 6 v, r l = 6 ? , r g = 330 ? gate non-trigger voltage v gd 0.2 ? ? v tj = 125c, v d = 1/2 v drm thermal resistance r th(j-c) ? ? 3.8 c/w junction to case note3 critical-rate of rise of off-state commutating voltage note4 (dv/dt)c 5 ? ? v/ s tj = 125c notes: 2. measurement using the gate trig ger characteristics measureme circuit. 3. case temperature is measured on the t 2 tab. 4. test conditions of the critical-rate of rise of o ff-state commutating voltage is shown in the table below. test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature tj = 125c 2. rate of decay of on -state commutating current (di/dt)c = ?1.5 a/ms 3. peak off-state voltage v d = 400 v supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c www.kersemi.com
BCR3AS-12 performance curves maximum on-state characteristics on-state voltage (v) on-state current (a) rated surge on-state current conduction time (cycles at 60hz) surge on-state current (a) gate characteristics (i, ii and iii) gate current (ma) gate voltage (v) gate trigger voltage vs. junction temperature junction temperature (c) gate trigger voltage (tj = tc) gate trigger voltage (tj = 25c) 100 (%) gate trigger current vs. junction temperature junction temperature (c) gate trigger current (tj = tc) gate trigger current (tj = 25c) 100 (%) maximum transient thermal impedance characteristics (junction to case) conduction time (cycles at 60hz) transient thermal impedance (c/w) 5 0123 4 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 ?1 10 0 25710 1 310 2 4257 34 30 35 20 25 10 15 5 40 0 10 0 23 10 0 5710 1 23 5710 2 23 5710 3 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 ?1 23 10 ?1 5710 0 23 5710 1 23 5710 2 4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10 1 10 3 7 5 3 2 20 10 2 7 5 3 2 60 100 140 4 4 04080 120 10 1 10 3 7 5 3 2 20 10 2 7 5 3 2 60 100 140 4 4 04080 120 ? 60 ? 20 ? 40 ? 60 ? 20 ? 40 p gm = 3w tj = 25c p g(av) = 0.3w i rgt i , i rgt iii i fgt i i gm = 0.5a typical example i rgt iii typical example v gd = 0.2v i fgt i , i rgt i www.kersemi.com
BCR3AS-12 on-state power dissipation (w) rms on-state current (a) maximum on-state power dissipation rms on-state current (a) case temperature (c) allowable case temperature vs. rms on-state current rms on-state current (a) ambient temperature (c) allowable ambient temperature vs. rms on-state current junction temperature (c) repetitive peak off-state current (tj = tc) repetitive peak off-state current (tj = 25c) 100 (%) repetitive peak off-state current vs. junction temperature 10 8 6 4 2 0 5 0123 4 160 120 100 60 20 0 4.0 0 0.5 1.5 2.5 3.5 40 80 140 1.0 2.0 3.0 140 40 0 20 60 80 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 160 120 100 60 20 0 1.6 0 0.2 0.6 1.0 1.4 40 80 140 0.4 0.8 1.2 ? 60 ? 20 ? 40 360 conduction resistive, inductive loads curves apply regardless of conduction angle 360 conduction resistive, inductive loads typical example holding current vs. junction temperature junction temperature (c) holding current (tj = tc) holding current (tj = 25c) 100 (%) latching current (ma) latching current vs. junction temperature junction temperature (c) 10 1 10 3 7 5 3 2 20 10 2 7 5 3 2 60 100 140 4 4 04080 120 140 20 60 100 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 04080 120 ? 60 ? 20 ? 40 ? 60 ? 20 ? 40 typical example distribution t 2 + , g ? typical example t 2 + , g + t 2 ? , g ? typical example natural convection no fins curves apply regardless of conduction angle resistive, inductive loads www.kersemi.com
BCR3AS-12 rate of rise of off-state voltage (v/ s) breakover voltage (dv/dt = xv/ s) breakover voltage (dv/dt = 1v/ s) 100 (%) breakover voltage vs. rate of rise of off-state voltage breakover voltage vs. junction temperature junction temperature (c) breakover voltage (tj = tc) breakover voltage (tj = 25c) 100 (%) commutation characteristics critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a/ms) gate trigger current (tw) gate trigger current (dc) 100 (%) gate current pulse width ( s) gate trigger current vs. gate current pulse width 160 100 80 40 20 0 140 40 020 6080 140 100120 60 120 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 ? 60 ? 20 ? 40 10 1 10 3 7 5 3 2 10 0 25710 1 10 2 7 5 3 2 310 2 4 4 4257 3 4 10 0 7 5 3 2 10 0 23 5710 1 10 1 7 7 5 3 2 23 5710 2 4 4 4 4 typical example typical example tj = 125c iii quadrant i quadrant main voltage main current i t (di/dt)c v d time time (dv/dt)c typical example tj = 125c i t = 4a = 500 s v d = 200v f = 3hz minimum characteristics value iii quadrant i quadrant typical example i rgt iii i rgt i i fgt i 6 ? 6 ? 6 ? 6v 6v 6v 330 ? 330 ? 330 ? a v a v a v test procedure i test procedure iii test procedure ii gate trigger characteristics test circuits www.kersemi.com
BCR3AS-12 package dimensions mp-3a eiaj package code jedec code mass (g) (reference value) lead material ? ? 0.2 0.5 0.1 0.1 0.1 0.5 0.2 6.6 2.3 1.4 0.2 2.3 10.4 max 1 max 2.5 min 0.76 1 0.76 0.2 1 0.2 6.1 0.2 2.3 0.2 note 1) the dimensional figures indicate representative values unless otherwise the tolerance is specified. order code lead form standard packing quantity standard order code standard order code example surface-mounted type taping 3000 type name +a ? t +direction (1 or 2) +3 BCR3AS-12a-t13 surface-mounted type plastic magazine (tube) 75 type name +a BCR3AS-12a note : please confirm the specificat ion about the shipping in detail. www.kersemi.com
BCR3AS-12 features ? i t(rms) : 3 a ? v drm : 600 v ? i fgt i , i rgt i , i rgt iii : 15 ma ? non-insulated type ? planar passivation type outline 2, 4 1 3 1. t 1 terminal 2. t 2 terminal 3. gate terminal 4. t 2 terminal mp-3a 1 3 2 4 applications hybrid ic, solid state relay, switching mode power supply, light dimmer, electric fan, electric blanket, control of household equipment such as washing machine, and other general purpose control applications warning 1. refer to the recommended circuit values around the triac before using. maximum ratings voltage class parameter symbol 12 unit repetitive peak off-state voltage note1 v drm 600 v non-repetitive peak off-state voltage note1 v dsm 720 v www.kersemi.com
parameter symbol ratings unit conditions rms on-state current i t(rms) 3a commercial frequency, sine full wave 360 conduction, tc = 133c note3 surge on-state current i tsm 30 a 60hz sinewave 1 full cycle, peak value, non-repetitive i 2 t for fusing i 2 t3.7a 2 s value corresponding to 1 cycle of half wave 60hz, surge on-state current peak gate power dissipation p gm 3w average gate power dissipation p g(av) 0.3 w peak gate voltage v gm 6v peak gate current i gm 0.3 a junction temperature tj ? 40 to +150 c storage temperature tstg ? 40 to +150 c mass ? 0.26 g typical value notes: 1. gate open. electrical characteristics parameter symbol min. typ. max. unit test conditions repetitive peak off-state current i drm ? ? 2.0 ma tj = 150c, v drm applied on-state voltage v tm ??1.7v tc = 25c, i tm = 4.5 a, instantaneous measurement i v fgt i ??1.5v ii v rgt i ??1.5v gate trigger voltage note2 iii v rgt iii ??1.5v tj = 25c, v d = 6 v, r l = 6 ? , r g = 330 ? i i fgt i ??15ma ii i rgt i ??15ma gate trigger current note2 iii i rgt iii ??15ma tj = 25c, v d = 6 v, r l = 6 ? , r g = 330 ? gate non-trigger voltage v gd 0.2/0.1 ? ? v tj = 125c/150c, v d = 1/2 v drm thermal resistance r th(j-c) ? ? 3.8 c/w junction to case note3 critical-rate of rise of off-state commutating voltage note4 (dv/dt)c 5/1 ? ? v/ s tj = 125c/150c notes: 2. measurement using the gate trigger characteristics measurement circuit. 3. case temperature is measured on the t 2 tab. 4. test conditions of the critical-rate of rise of off- state commutating voltage is shown in the table below. test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature tj = 125c/150c 2. rate of decay of on -state commutating current (di/dt)c = ?1.5 a/ms 3. peak off-state voltage v d = 400 v supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c www.kersemi.com
performance curves maximum on-state characteristics on-state voltage (v) on-state current (a) rated surge on-state current conduction time (cycles at 60hz) surge on-state current (a) gate characteristics (i, ii and iii) gate current (ma) gate voltage (v) gate trigger voltage vs. junction temperature junction temperature (c) gate trigger voltage (tj = tc) gate trigger voltage (tj = 25c) 100 (%) gate trigger current vs. junction temperature junction temperature (c) gate trigger current (tj = tc) gate trigger current (tj = 25c) 100 (%) maximum transient thermal impedance characteristics (junction to case) conduction time (cycles at 60hz) transient thermal impedance (c/w) 10 0 25710 1 310 2 4257 34 30 35 20 25 10 15 5 40 0 0.51.52.53.5 1.0 2.0 3.0 4.0 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 ?1 10 0 23 10 0 5710 1 23 5710 2 23 5710 3 7 5 3 2 10 1 7 5 3 5 2 7 5 10 ?1 3 2 23 10 ?1 5710 0 23 5710 1 23 5710 2 4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10 1 10 3 7 5 3 2 10 2 7 5 3 2 4 4 20 60 100 160 140 04080120 10 1 10 3 7 5 3 2 10 2 7 5 4 4 3 2 20 60 100 160 140 04080120 ? 60 ? 20 ? 40 ? 60 ? 20 ? 40 tj = 25c tj = 150c p gm = 3w p g(av) = 0.3w i fgt i , i rgt iii i rgt i v gd = 0.1v i gm = 0.5a typical example i rgt iii i fgt i , i rgt i typical example www.kersemi.com
on-state power dissipation (w) rms on-state current (a) maximum on-state power dissipation rms on-state current (a) case temperature (c) allowable case temperature vs. rms on-state current rms on-state current (a) ambient temperature (c) allowable ambient temperature vs. rms on-state current junction temperature (c) repetitive peak off-state current (tj = tc) repetitive peak off-state current (tj = 25c) 100 (%) repetitive peak off-state current vs. junction temperature 10 8 6 4 2 0 5 0 123 4 160 120 100 60 20 0 4.0 0 0.5 1.5 2.5 3.5 40 80 140 1.0 2.0 3.0 1.6 1.4 1.2 160 120 100 60 20 0 00.2 0.6 1.0 40 80 140 0.4 0.8 10 3 7 5 3 2 10 2 10 4 7 5 3 2 10 5 7 5 3 2 10 6 7 5 3 2 20 60 100 160 140 04080 120 ? 60 ? 20 ? 40 360 conduction resistive, inductive loads curves apply regardless of conduction angle 360 conduction resistive, inductive loads typical example 10 3 5 7 3 2 5 4 4 7 3 2 10 2 10 1 20 60 100 160 140 04080 120 10 3 7 5 3 2 7 5 3 2 7 5 3 2 10 2 10 1 10 0 20 60 100 160 140 0 40 80 120 ? 60 ? 20 ? 40 ? 60 ? 20 ? 40 holding current vs. junction temperature junction temperature (c) holding current (tj = tc) holding current (tj = 25c) 100 (%) latching current (ma) latching current vs. junction temperature junction temperature (c) t 2 + , g + t 2 ? , g ? typical example typical example distribution t 2 + , g ? typical example natural convection no fins curves apply regardless of conduction angle resistive, inductive loads www.kersemi.com
rate of rise of off-state voltage (v/ s) breakover voltage (dv/dt = xv/ s) breakover voltage (dv/dt = 1v/ s) 100 (%) breakover voltage vs. rate of rise of off-state voltage (tj=125c) breakover voltage vs. rate of rise of off-state voltage (tj=150c) rate of rise of off-state voltage (v/ s) breakover voltage (dv/dt = xv/ s) breakover voltage (dv/dt = 1v/ s) 100 (%) breakover voltage vs. junction temperature junction temperature (c) breakover voltage (tj = tc) breakover voltage (tj = 25c) 100 (%) commutation characteristics (tj=125c) critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a/ms) commutation characteristics (tj=150c) critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a/ms) gate trigger current (tw) gate trigger current (dc) 100 (%) gate current pulse width ( s) gate trigger current vs. gate current pulse width 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 160 100 80 40 20 0 140 60 120 20 60 100 160 140 04080120 ? 60 ? 20 ? 40 10 1 10 3 7 5 3 2 10 0 25710 1 10 2 7 5 3 2 310 2 4 4 4257 3 4 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 7 5 3 2 10 0 25710 1 10 1 7 7 5 3 2 3257 310 2 10 0 7 5 3 2 10 0 23 5710 1 10 1 7 7 5 3 2 23 5710 2 10 0 typical example typical example tj = 125c iii quadrant i quadrant typical example tj = 150c iii quadrant i quadrant main voltage main current i t (di/dt)c v d time time (dv/dt)c typical example tj = 125c i t = 4a = 500 s v d = 200v f = 3hz minimum characteristics value iii quadrant i quadrant main voltage main current i t (di/dt)c v d time time (dv/dt)c typical example tj = 150c i t = 4a = 500 s v d = 200v f = 3hz minimum characteristics value i quadrant iii quadrant typical example i rgt iii i rgt i i fgt i www.kersemi.com
c 1 = 0.1 to 0.47 f r 1 = 47 to 100 ? c 0 = 0.1 f r 0 = 100 ? gate trigger characteristics test circuits recommended circuit values around the triac test procedure i test procedure iii test procedure ii c 1 c 0 r 0 r 1 6 ? 6 ? 6 ? 6v 6v 6v 330 ? 330 ? 330 ? a v a v a v load www.kersemi.com
package dimensions mp-3a eiaj package code jedec code mass (g) (reference value) lead material ? ? 0.2 0.5 0.1 0.1 0.1 0.5 0.2 6.6 2.3 1.4 0.2 2.3 10.4 max 1 max 2.5 min 0.76 1 0.76 0.2 1 0.2 6.1 0.2 2.3 0.2 note 1) the dimensional figures indicate representative values unless otherwise the tolerance is specified. order code lead form standard packing quantity standard order code standard order code example surface-mounted type taping 3000 type name +b ? t +direction (1 or 2) +3 BCR3AS-12b-t13 surface-mounted type plastic magazine (tube) 75 type name +b BCR3AS-12b note : please confirm the specificat ion about the shipping in detail. www.kersemi.com

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